products details

Home Products

SAMSUNG IC Chips

K4A4G165WF-BCTD000 Samsung Chips 4Gb F-die DDR4 SDRAM X16 96FBGA K4A4G165WF 1.2V

All Category

High Power LED Chip

Miss. alice

sales_deng@163.com

+86 18802688921

Contact Now

All Category

K4A4G165WF-BCTD000 Samsung Chips 4Gb F-die DDR4 SDRAM X16 96FBGA K4A4G165WF 1.2V

Brand Name:	Samsung
Model Number:	K4A4G165WF-BCTD000
MOQ:	100PCS
Packaging Details:	100
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Document:

Product Name:

Samsung

Model:

K4A4G165WF-BCTD000

Density:

Speed:

2666 Mbps

Voltage:

1.2 V

Temperature:

0 ~ 85 °C

Package:

96FBGA

Supply Ability:

10000

Highlight:

K4A4G165WF-BCTD000

Samsung Chips K4A4G165WF

96FBGA Samsung Chips

Product Description

Samsung IC chips K4A4G165WF-BCTD000 4Gb F-die DDR4 SDRAM x16 96FBGA (K4A4G165WF) 1.2V

4Gb F-die DDR4 SDRAM

x16 only

96FBGA with Lead-Free & Halogen-Free

(RoHS compliant)

KEY FEATURES

• JEDEC standard 1.2V (1.14V~1.26V)

• VDDQ = 1.2V (1.14V~1.26V)

• VPP = 2.5V (2.375V~2.75V)

• 800 MHz fCK for 1600Mb/sec/pin,933 MHz fCK for 1866Mb/sec/pin,

1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin,

1333MHz fCK for 2666Mb/sec/pin, 1600MHz fCK for 3200Mb/sec/pin

• 8 Banks (2 Bank Groups)

• Programmable CAS Latency (posted CAS):

10,11,12,13,14,15,16,17,18,19,20,22,24

• Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600), 10,12

(DDR4-1866),11,14 (DDR4-2133),12,16 (DDR4-2400), 14,18 (DDR4-

2666) and 16,20 (DDR4-3200)

• 8-bit pre-fetch

• Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read

or write [either On the fly using A12 or MRS]

• Bi-directional Differential Data-Strobe

• Internal (self) calibration: Internal self calibration through ZQ pin

(RZQ: 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at

85C < TCASE < 95 C

• Asynchronous Reset

• Package: 96 balls FBGA - x16

• All of Lead-Free products are compliant for RoHS

• All of products are Halogen-free

• CRC (Cyclic Redundancy Check) for Read/Write data security

• Command address parity check

• DBI (Data Bus Inversion)

• Gear down mode

• POD (Pseudo Open Drain) interface for data input/output

• Internal VREF for data inputs

• External VPP for DRAM Activating Power

• hPPR is supported

The 4Gb DDR4 SDRAM F-die is organized as a 32Mbit x 16 I/Os x 8banks

device. This synchronous device achieves high speed double-data-rate

transfer rates of up to 3200Mb/sec/pin (DDR4-3200) for general applica

tions.

The chip is designed to comply with the following key DDR4 SDRAM fea

tures such as posted CAS, Programmable CWL, Internal (Self) Calibration,

On Die Termination using ODT pin and Asynchronous Reset.

All of the control and address inputs are synchronized with a pair of exter

nally supplied differential clocks. Inputs are latched at the crosspoint of dif

ferential clocks (CK rising and CK falling). All I/Os are synchronized with a

pair of bidirectional strobes (DQS and DQS) in a source synchronous fash

ion. The address bus is used to convey row, column, and bank address

information in a RAS/CAS multiplexing style. The DDR4 device operates

with a single 1.2V (1.14V~1.26V) power supply, 1.2V(1.14V~1.26V) VDDQ

and 2.5V (2.375V~2.75V) VPP.

The 4Gb DDR4 F-die device is available in 96ball FBGAs(x16).

Tags:

samsung memory ic

samsung chips

samsung ddr4 sdram

NT5AD512M16C4-JR Samsung IC Chips 8Gb C-Die DDR4 SDRAM 1.2V Up To 3200Mbps

Get Best Price

K4B4G1646E-BCNB000 Samsung IC Chips 4Gb E-die DDR3 SDRAM X16 96FBGA K4B4G1646E 1.5V

Get Best Price

K4AAG085WC-BCWE000 SAMSUNG Chips 16GB DDR4 1.2V 2400Mbps 78 ball FBGA

Get Best Price

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

products details

K4A4G165WF-BCTD000 Samsung Chips 4Gb F-die DDR4 SDRAM X16 96FBGA K4A4G165WF 1.2V

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips