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NT5AD512M16C4-JR Samsung IC Chips 8Gb C-Die DDR4 SDRAM 1.2V Up To 3200Mbps

NT5AD512M16C4-JR Samsung IC Chips 8Gb C-Die DDR4 SDRAM 1.2V Up To 3200Mbps

Brand Name: Samsung
Model Number: NT5AD512M16C4-JR
MOQ: 100PCS
Packaging Details: 100
Payment Terms: T/T
Detail Information
Place of Origin:
China
Product Name:
Samsung
Model:
NT5AD512M16C4-JR
Density:
8Gb
Voltage:
1.2V
Package:
BGA
Speed:
3200Mbps
Temperature:
0~95°C
Grade:
Commercial
Supply Ability:
10000
Highlight:

NT5AD512M16C4-JR

,

Samsung IC Chips 8Gb

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DDR4 SDRAM IC Chips

Product Description

Samsung IC chips NT5AD512M16C4-JR 8Gb C-Die DDR4 SDRAM 1.2V up to 3200Mbps


Features
Data Integrity
- Auto Self Refresh (ASR) by DRAM built-in TS
- Auto Refresh and Self Refresh Modes
DRAM Access Bandwidth 
- Separated IO gating structures by Bank Groups
- Self Refresh Abort
- Fine Granularity Refresh
Signal Synchronization
- Write Leveling via MR settings1
- Read Leveling via MPR
Reliability & Error Handling
- Command/Address Parity
- Databus Write CRC
- MPR readout
- Boundary Scan (X16)
- Post Package Repair
Signal Integrity
- Internal VREFDQ Training
- Read Preamble Training
- Gear Down Mode
- Per DRAM Addressability
- Configurable DS for system compatibility
- Configurable On-Die Termination
- Data bus inversion (DBI)
- ZQ Calibration for DS/ODT impedance accuracy
via external ZQ pad (240 Ω ± 1%)
Power Saving & Efficiency
- POD with VDDQ termination
- Command/Address Latency (CAL)
- Maximum Power Saving
- Low-power Auto Self Refresh (LPASR)

Data Integrity
- Auto Self Refresh (ASR) by DRAM built-in TS
- Auto Refresh and Self Refresh Modes
DRAM Access Bandwidth
- Separated IO gating structures by Bank Groups
- Self Refresh Abort
- Fine Granularity Refresh
Signal Synchronization
- Write Leveling via MR settings1
- Read Leveling via MPR
Reliability & Error Handling
- Command/Address Parity
- Databus Write CRC
- MPR readout
- Boundary Scan (X16)
- Post Package Repair
Signal Integrity
- Internal VREFDQ Training
- Read Preamble Training
- Gear Down Mode
- Per DRAM Addressability
- Configurable DS for system compatibility
- Configurable On-Die Termination
- Data bus inversion (DBI)
- ZQ Calibration for DS/ODT impedance accuracy
via external ZQ pad (240 Ω ± 1%)
Power Saving & Efficiency
- POD with VDDQ termination
- Command/Address Latency (CAL)
- Maximum Power Saving
- Low-power Auto Self Refresh (LPASR)


Programmable Functions
Output Driver Impedance (34/48)
CAS Write Latency (9/10/11/12/14/16/18/20)
Additive Latency (0/CL-1/CL-2) 
CS to Command Address Latency (3/4/5/6/8) 
Command Address Parity Latency (4/5/6)
Write Recovery Time (10/12/14/16/18/20/24)
Burst Type (Sequential/Interleaved)
RTT_PARK (34/40/48/60/80/120/240)
RTT_NOM (34/40/48/60/80/120/240)
RTT_WR (80/120/240)
Read Preamble (1T/2T)
Write Preamble (1T/2T)
Burst Length (BL8/BC4/BC4 or 8 on the fly)
LPASR (Manual: Normal/Reduced/Extended, Auto:TS)

Options
Speed Grade (CL-TRCD-TRP) 2
- 2666 Mbps / 19-19-19
- 3200 Mbps / 22-22-22
Temperature Range (Tc) 5
- Commercial Grade : 0℃~95℃
VDD/VDDQ/VPP
- 1.2V / 1.2V / 2.5V
Package information
Lead-free RoHS compliance and Halogen-free
NT5AD512M16C4-JR Samsung IC Chips 8Gb C-Die DDR4 SDRAM 1.2V Up To 3200Mbps
Density and Addressing
NT5AD512M16C4-JR Samsung IC Chips 8Gb C-Die DDR4 SDRAM 1.2V Up To 3200Mbps