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K4B4G1646E-BCNB000 Samsung IC Chips 4Gb E-die DDR3 SDRAM X16 96FBGA K4B4G1646E 1.5V

K4B4G1646E-BCNB000 Samsung IC Chips 4Gb E-die DDR3 SDRAM X16 96FBGA K4B4G1646E 1.5V

Brand Name: Samsung
Model Number: K4B4G1646E-BCNB000
MOQ: 100PCS
Packaging Details: 100
Payment Terms: T/T
Detail Information
Place of Origin:
China
Product Name:
Samsung
Model:
K4B4G1646E-BCNB000
Density:
4 Gb
Speed:
2133 Mbps
Voltage:
1.5 V
Temperature:
0 ~ 85 °C
Supply Ability:
10000
Highlight:

K4B4G1646E-BCNB000

,

Samsung IC Chips 4Gb

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96FBGA Samsung IC Chips

Product Description

Samsung IC chips K4B4G1646E-BCNB000 4Gb E-die DDR3 SDRAM x16 96FBGA (K4B4G1646E) 1.5V


4Gb E-die DDR3 SDRAM
x16
96FBGA with Lead-Free & Halogen-Free
(RoHS compliant)

Key Features
K4B4G1646E-BCNB000 Samsung IC Chips 4Gb E-die DDR3 SDRAM X16 96FBGA K4B4G1646E 1.5V
• JEDEC standard 1.5V(1.425V~1.575V)
• VDDQ = 1.5V(1.425V~1.575V)
• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,
933MHz fCK for 1866Mb/sec/pin, 1066 MHz fCK for 2133Mb/sec/pin
• 8 Banks
• Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13,14
• Programmable Additive Latency: 0, CL-2 or CL-1 clock
• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6
(DDR3-1066), 7 (DDR3-1333) , 8 (DDR3-1600), 9 (DDR3-1866) and
10 (DDR3-2133)
• 8-bit pre-fetch
• Burst Length: 8 , 4 with tCCD = 4 which does not allow seamless read
or write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at
85C < TCASE < 95 C
• Asynchronous Reset
• Package : 96 balls FBGA - x16
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free
The 4Gb DDR3 SDRAM E-die is organized as a 32Mbit x 16 I/Os x 8banks,
device. This synchronous device achieves high speed double-data-rate
transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applica
tions.
The chip is designed to comply with the following key DDR3 SDRAM fea
tures such as posted CAS, Programmable CWL, Internal (Self) Calibration,
On Die Termination using ODT pin and Asynchronous Reset .
All of the control and address inputs are synchronized with a pair of exter
nally supplied differential clocks. Inputs are latched at the crosspoint of dif
ferential clocks (CK rising and CK falling). All I/Os are synchronized with a
pair of bidirectional strobes (DQS and DQS) in a source synchronous fash
ion. The address bus is used to convey row, column and bank address
information in a RAS/CAS multiplexing style. The DDR3 device operates
with a single 1.5V(1.425V~1.575V)power supply and 1.5V(1.425V~1.575V)
VDDQ.
The 4Gb DDR3 E-die device is available in 96ball FBGAs(x16).

K4B4G1646E-BCNB000 Samsung IC Chips 4Gb E-die DDR3 SDRAM X16 96FBGA K4B4G1646E 1.5V

K4B4G1646E-BCNB000 Samsung IC Chips 4Gb E-die DDR3 SDRAM X16 96FBGA K4B4G1646E 1.5V