NVB110N65S3F ONsemi Chips N Channel SUPERFET III MOSFET 650V 30A 110mΩ Ultra Low Qg 58nC

ONsemi chips NVB110N65S3F N‑Channel SUPERFET III MOSFET 650V 30A 110mΩ Ultra‑Low Qg 58nC

Description

The device features the following thermal resistance ratings: a maximum junction-to-case thermal resistance (RθJC​) of 0.52 °C/W and a maximum junction-to-ambient thermal resistance (RθJA​) of 40 °C/W. For electrical characteristics at TC​=25∘C unless otherwise noted, the drain-to-source breakdown voltage (BVDSS​) is 650 V at VGS​=0 V, ID​=1 mA, TJ​=25∘C, and 700 V at VGS​=0 V, ID​=10 mA, TJ​=150∘C, with a breakdown voltage temperature coefficient (ΔBVDSS​/ΔTJ​) of 0.61 V/°C. Zero gate voltage drain current (IDSS​) has a maximum of 10 μA at VDS​=650 V, VGS​=0 V, and a typical value of 128 μA at VDS​=520 V, TC​=125∘C, while gate-to-body leakage current (IGSS​) has a maximum of ±100 nA at VDS​=0 V, VGS​=±30 V. Gate threshold voltage (VGS(th)​) ranges from 3.0 V to 5.0 V, static drain-to-source on resistance (RDS(on)​) has a typical value of 93 mΩ and a maximum of 110 mΩ at VGS​=10 V, ID​=15 A, and forward transconductance (gFS​) has a typical value of 17 S at VGS​=20 V, ID​=15 A. For dynamic characteristics, input capacitance (Ciss​) is typically 2560 pF, output capacitance (Coss​) is typically 50 pF, effective output capacitance (Coss(eff.)​) is typically 553 pF, and energy related output capacitance (Coss(er.)​) is typically 83 pF. Total gate charge (Qg(total)​) is typically 58 nC, gate-to-source charge (Qgs​) is typically 19 nC, gate-to-drain "Miller" charge (Qgd​) is typically 23 nC, and equivalent series resistance (ESR) is typically 2 Ω at 1 MHz. For switching characteristics at VGS​=10 V, turn-on delay time (td(on)​) is typically 29 ns, rise time (tr​) is typically 32 ns, turn-off delay time (td(off)​) is typically 61 ns, and fall time (tf​) is typically 16 ns. For source-drain diode characteristics, maximum continuous source-to-drain diode forward current (IS​) is 30 A, maximum pulsed current (ISM​) is 69 A, source-to-drain diode forward voltage (VSD​) is typically -1.3 V, reverse-recovery time (trr​) is typically 94 ns, and reverse-recovery charge (Qrr​) is typically 343 nC. Product parametric performance is indicated for the listed test conditions, and performance may vary if operated under different conditions, with typical characteristics essentially independent of operating temperature.