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IRLR3110ZTRPBF Infineon Chip HEXFET Power MOSFET Advanced Process Technology 175°C Operating Temperature

IRLR3110ZTRPBF Infineon Chip HEXFET Power MOSFET Advanced Process Technology 175°C Operating Temperature

Brand Name: Infineon Chip
Model Number: IRLR3110ZTRPBF
MOQ: 2500
Packaging Details: 2500PCS/reel
Payment Terms: T/T
Detail Information
Place of Origin:
China
Model:
IRLR3110ZTRPBF
Product Name:
Infineon Chip
Type:
SMD/SMT
Continuous Drain Current:
63 A
Operating Temperature:
- 55 °C ~ + 175 °C
Power Dissipation:
140 W
Supply Ability:
100000
Highlight:

IRLR3110ZTRPBF

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IRLR3110Z Infineon Chip

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Advanced Process HEXFET MOSFET

Product Description

Infineon Chip IRLR3110ZTRPBF HEXFET® Power MOSFET Advanced Process Technology 175°C Operating Temperature


Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

Description
Specifically designed for Industrial applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com
bine to make this design an extremely efficient and
reliable device for use in Industrial applications
and a wide variety of other applications.

IRLR3110ZTRPBF Infineon Chip HEXFET Power MOSFET Advanced Process Technology 175°C Operating Temperature

Absolute Maximum Ratings
IRLR3110ZTRPBF Infineon Chip HEXFET Power MOSFET Advanced Process Technology 175°C Operating Temperature
 
Thermal Resistance
IRLR3110ZTRPBF Infineon Chip HEXFET Power MOSFET Advanced Process Technology 175°C Operating Temperature

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IRLR3110ZTRPBF Infineon Chip HEXFET Power MOSFET Advanced Process Technology 175°C Operating Temperature