products details

Home Products

Infineon Chip

IPB200N15N3G Infineon Chip OptiMOS3 Power Transistor N-channel normal level 175 °C operating temperature

All Category

High Power LED Chip

Miss. alice

sales_deng@163.com

+86 18802688921

Contact Now

All Category

IPB200N15N3G Infineon Chip OptiMOS3 Power Transistor N-channel normal level 175 °C operating temperature

Brand Name:	Infineon Chip
Model Number:	IPB200N15N3G
MOQ:	2500
Packaging Details:	2500PCS/reel
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Document:

Model:

IPB200N15N3G

Product Name:

Infineon Chip

Type:

SMD/SMT

Operating Temperature:

- 55 °C ~ + 175 °C

Power Dissipation:

150 W

Continuous Drain Current:

Supply Ability:

100000

Highlight:

IPB200N15N3G

IPB200N15N3 Infineon Chip

N-Channel OptiMOS3

Product Description

Infineon Chip IPB200N15N3G OptiMOS™3 Power-Transistor N-channel, normal level 175 °C operating temperature

OptiMOS™3 Power-Transistor N-channel, normal level 175 °C operating temperature

Features

N-channel, normal level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

175 °C operating temperature

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC1) for target application

Ideal for high-frequency switching and synchronous rectification

Halogen-free according to IEC61249-2-21

Product Summary

Maximum ratings, at \(T_j\)=25 °C, unless otherwise specified: Continuous drain current \(I_D\) is 50 A at \(T_C\)=25 °C and 40 A at \(T_C\)=100 °C. Pulsed drain current \(I_{D,pulse}\) is 200 A at \(T_C\)=25 °C. Avalanche energy, single pulse \(E_{AS}\) is 170 mJ under conditions of \(I_D\)=50 A, \(R_{GS}\)=25 Ω. Reverse diode dv/dt is 6 kV/μs under conditions of \(I_D\)=50 A, \(V_{DS}\)=120 V, di/dt=100 A/μs, \(T_{j,max}\)=175 °C. Gate source voltage \(V_{GS}\) is ±20 V. Power dissipation \(P_{tot}\) is 150 W at \(T_C\)=25 °C. Operating and storage temperature \(T_j\), \(T_{stg}\) ranges from -55 °C to 175 °C. IEC climatic category; DIN IEC 68-1 is 55/175/56. Note 1: J-STD20 and JESD22. Note 2: See figure 3. Thermal characteristics: Thermal resistance, junction-case \(R_{thJC}\) has a maximum value of 1 K/W. Thermal resistance, junction-ambient \(R_{thJA}\) has a maximum value of 75 K/W with minimal footprint and a maximum value of 50 K/W with 6 cm² cooling area. Note 3: 6 cm² cooling area.

Electrical characteristics, at \(T_j\)=25 °C, unless otherwise specified. Static characteristics: Drain-source breakdown voltage \(V_{(BR)DSS}\) is 150 V under conditions of \(V_{GS}\)=0 V, \(I_D\)=1 mA. Gate threshold voltage \(V_{GS(th)}\) ranges from 2 V to 4 V with a typical value of 3 V under conditions of \(V_{DS}\)=\(V_{GS}\), \(I_D\)=90 μA. Zero gate voltage drain current \(I_{DSS}\) has a typical value of 0.1 μA and a maximum value of 1 μA at \(V_{DS}\)=120 V, \(V_{GS}\)=0 V, \(T_j\)=25 °C; at \(V_{DS}\)=120 V, \(V_{GS}\)=0 V, \(T_j\)=125 °C, its typical value is 10 μA and maximum value is 100 μA. Gate-source leakage current \(I_{GSS}\) has a typical value of 1 nA and maximum value of 100 nA under conditions of \(V_{GS}\)=20 V, \(V_{DS}\)=0 V. Drain-source on-state resistance \(R_{DS(on)}\) has a typical value of 16 mΩ and maximum value of 20 mA under both conditions of \(V_{GS}\)=10 V, \(I_D\)=50 A and \(V_{GS}\)=8 V, \(I_D\)=25 A. Gate resistance \(R_G\) has a typical value of 2.4 Ω. Transconductance \(g_{fs}\) ranges from 29 S with a typical value of 57 S under conditions of \(|V_{DS}|>2|I_D|R_{DS(on)max}\), \(I_D\)=50 A.

Tags:

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

products details

IPB200N15N3G Infineon Chip OptiMOS3 Power Transistor N-channel normal level 175 °C operating temperature

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips