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MT40A512M16TB-062E:R Micron Chips 1.2V DDR4 3200MT/s JEDEC Compliant Low Power Modes

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MT40A512M16TB-062E:R Micron Chips 1.2V DDR4 3200MT/s JEDEC Compliant Low Power Modes

Brand Name:	Micron
Model Number:	MT40A512M16TB-062E:R
MOQ:	500PCS
Packaging Details:	500PCS/reel
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Product Name:

Micron

Model:

MT40A512M16TB-062E:R

Data Bus Width:

16 Bit

Maximum Clock Frequency:

1.6 GHz

Power Supply Voltage:

1.14 V-1.26 V

Operating Temperature:

0 °C~+ 95 °C

Type:

SMD/SMT

Supply Ability:

10000

Highlight:

MT40A512M16TB-062E:R

MT40A512M16TB Micron Chips

3200MT/s DDR4 SDRAM

Product Description

Micron chips MT40A512M16TB-062E:R 1.2V Up to 3200MT/s JEDEC-Compliant Low-Power Modes

Features

VDD = VDDQ = 1.2V ±60mV
VPP = 2.5V, −125mV, +250mV
On-die, internal, adjustable VREFDQ generation
1.2V pseudo open-drain I/O
Refresh time of 8192-cycle at TC temperature range:
64ms at −40°C to 85°C
32ms at >85°C to 95°C
16ms at >95°C to 105°C
16 internal banks (x4, x8): 4 groups of 4 banks each
8 internal banks (x16): 2 groups of 4 banks each
8n-bit prefetch architecture
Programmable data strobe preambles
Data strobe preamble training
Command/Address latency (CAL)
Multipurpose register READ and WRITE capability
Write leveling
Self refresh mode
Low-power auto self refresh (LPASR)
Temperature controlled refresh (TCR)
Fine granularity refresh
Self refresh abort
Maximum power saving
Output driver calibration
Nominal, park, and dynamic on-die termination (ODT)
Data bus inversion (DBI) for data bus
Command/Address (CA) parity
Databus write cyclic redundancy check (CRC)
Per-DRAM addressability
Connectivity test
JEDEC JESD-79-4 compliant
sPPR and hPPR capability
MBIST-PPR support (Die Revision R only)

Options¹
Configuration
2 Gig x4
1 Gig x8
512 Meg x16
78-ball FBGA package (Pb-free) – x4, x8
9mm x 13.2mm – Rev. A
8mm x 12mm – Rev. B, D, G
7.5mm x 11mm – Rev. E, H, J, R
96-ball FBGA package (Pb-free) – x16
9mm x 14mm – Rev. A
8mm x 14mm – Rev. B
7.5mm x 13.5mm – Rev. D, E, H
7.5mm x 13mm – Rev. J, R
Timing – cycle time
0.625ns @ CL = 22 (DDR4-3200)
0.682ns @ CL = 21 (DDR4-2933)
0.750ns @ CL = 19 (DDR4-2666)
0.750ns @ CL = 18 (DDR4-2666)
0.833ns @ CL = 17 (DDR4-2400)
0.833ns @ CL = 16 (DDR4-2400)
0.937ns @ CL = 15 (DDR4-2133)
1.071ns @ CL = 13 (DDR4-1866)
Operating temperature
Commercial (0° ≤ TC ≤ 95°C)
Industrial (−40° ≤ TC ≤ 95°C)
Automotive (−40° ≤ TC ≤ 105°C)
Revision
:A, :B, :D, :E, :G, :H, :J, :R

This table presents key timing parameters for DDR4 SDRAM across speed grades, spanning data rates from 1866 to 2666 MT/s. Corresponding target CL-nRCD-nRP values include 13-13-13 (1866 MT/s), 15-15-15/16-16-16 (2133 MT/s), 16-16-16/17-17-17 (2400 MT/s), and 19-19-19 (2666 MT/s), with tAA, tRCD, and tRP timings ranging from 13.32 ns to 15.00 ns, some with alternative tighter values in parentheses.

This table outlines the addressing configurations for three DDR4 SDRAM densities: 2048 Meg x4, 1024 Meg x8, and 512 Meg x16. The 2048 Meg x4 and 1024 Meg x8 variants feature 4 bank groups with BG[1:0] addressing, while the 512 Meg x16 has 2 bank groups with BG0 addressing; all have 4 banks per group addressed via BA[1:0]. Row addressing differs: 128K (A[16:0]) for 2048 Meg x4 and 64K (A[15:0]) for the other two, while column addressing is uniformly 1K (A[9:0]) across all configurations. Page sizes per bank are 512B, 1KB, and 2KB respectively, calculated by the formula Page size = 2^COLBITS × ORG/8, where COLBITS is the number of column address bits and ORG is the DQ bit count.

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products details

MT40A512M16TB-062E:R Micron Chips 1.2V DDR4 3200MT/s JEDEC Compliant Low Power Modes

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips