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IR21814STRPBF Infineon Gate Driver Using Standard Control ICs to Generate Negative Gate Bias for MOSFETs and IGBTs

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IR21814STRPBF Infineon Gate Driver Using Standard Control ICs to Generate Negative Gate Bias for MOSFETs and IGBTs

Brand Name:	Infineon Chip
Model Number:	IR21814STRPBF
MOQ:	2500
Packaging Details:	2500PCS/reel
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Document:

Model:

IR21814STRPBF

Product Name:

Infineon Chip

Type:

SMD/SMT

Output Current:

1.8 A

Supply Voltage:

10 V- 20 V

Operating Temperature:

- 40 °C ~ + 125 °C

Supply Ability:

100000

Highlight:

IR21814STRPBF

IR21814S Infineon Gate Driver

Standard Control IC Gate Driver

Product Description

Infineon Chip IR21814STRPBF Using Standard Control ICs to Generate Negative Gate Bias for MOSFETs and IGBTs

Using Standard Control ICs to Generate Negative Gate Bias for MOSFETs and IGBTs

Introduction

Inherently neither the MOSFET nor the IGBT requires negative bias on the gate. Setting the gate voltage to zero

at turn-off insures proper operation and virtually provides negative bias relative to the threshold voltage of the

device. Negative gate bias does not significantly affect switching speed as opposed to the bipolar transistor.

However, there are circumstances when a negative gate drive is necessary:

• The semiconductor manufacturer specifies negative gate bias for the device

• When the gate voltage can not be held safely below the threshold voltage due to noise generated in the

circuit.

Although reference will be made to IGBTs, the information contained is equally applicable to power MOSFETs

or Silicon Carbide (SiC) MOSFETs.

DC Gate Characteristics

The minimum threshold voltage for most IGBTs is 3V at room temperature. The temperature coefficient of the

threshold voltage is always negative; increasing junction temperature results in decreasing threshold voltage. If

the junction temperature rises from 25°C to 150°C, and the temperature coefficient is -11 mV/°C, then the

threshold voltage decreases by 1.4V. Thus, a threshold voltage of 1.6V can be expected at high temperature and

worst-case conditions.

Dynamic Operation

The problem arises when the voltage increases rapidly between the collector-emitter terminals of the IGBT.

During the transient, the gate-collector (Miller) capacitance delivers charge to the gate, increasing the gate

voltage. The height and width of the voltage ‘blip’ at the gate is determined by the ratio of the gatecollector

and gate-emitter capacitances, the impedance of the drive circuit connected to the gate, and the applied dV/dt

between the collectoremitter terminals.

The internal capacitances are given on the data sheet. Notice the Miller capacitance of the IGBT is smaller than

a similarly rated MOSFET, due to the smaller die size.

The impedance to the gate can be minimized by selecting a low impedance Control IC and by minimizing the

stray inducance in the drive loop.

The dV/dt can be set to an optimum value (noise versus losses) by selecting the proper value of series gate

resistor. The series gate resistor affects only the turn-on speed of the IGBT, the turn-off speed is largely

determined by the IGBT itself. A parallel diode, with the anode towards the gate, across the gate resistor is also

recommended. The diode is reverse biased at turn-on but holds the gate down at turn-off, and during the off

state.

The Control IC has to have an electrically separated reference pin for the gate drive output. This pin should be

connected directly to the emitter terminal of the IGBT, or the Kelvin terminal of the IGBT module. The gate and

the emitter voltages are then floating on top of the noise generated by high current ground wiring, but the

difference of the two voltages (the effective drive voltage) is free from the noise.

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products details

IR21814STRPBF Infineon Gate Driver Using Standard Control ICs to Generate Negative Gate Bias for MOSFETs and IGBTs

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips