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MT41K256M16TW-107:P Micron Chips 1.35V DDR3L 512MB 96-ball FBGA PC3L-1866

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MT41K256M16TW-107:P Micron Chips 1.35V DDR3L 512MB 96-ball FBGA PC3L-1866

Brand Name:	Micron
Model Number:	MT41K256M16TW-107:P
MOQ:	100
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Features:

Write Leveling, Multipurpose Register, Output Driver Calibration

Total Density:

Model:

MT41K1G4, MT41K512M8, MT41K256M16

Internal Banks:

Operating Temperature:

Commercial: 0°C To +95°C; Industrial (IT): -40°C To +95°C

Product Name:

Micron

Supply Ability:

1000000

Highlight:

MT41K256M16TW-107:P

MT41K256M16TW Micron Chips

1.35V DDR3L SDRAM

Product Description

Micron chips MT41K256M16TW-107:P DDR3L 512MB 96-ball FBGA PC3L-1866

Description

DDR3L SDRAM (1.35V) is a low voltage version of the

DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM

(Die Rev.: E) data sheet specifications when running in

1.5V compatible mode.

Features

• VDD = VDDQ = 1.35V (1.283–1.45V)

• Backward compatible to VDD = VDDQ = 1.5V ±0.075V

– Supports DDR3L devices to be backward com

patible in 1.5V applications

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT)

for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 0°C to +95°C

– 64ms, 8192-cycle refresh at 0°C to +85°C

– 32ms at +85°C to +95°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

Options

Configuration

1 Gig x 4 → Marking: 1G4

512 Meg x 8 → Marking: 512M8

256 Meg x 16 → Marking: 256M16

FBGA package (Pb-free) – x4, x8

78-ball (8mm x 10.5mm) Rev. P → Marking: DA

FBGA package (Pb-free) – x16

96-ball (8mm x 14mm) Rev. P → Marking: TW

Timing – cycle time

938ps @ CL = 14 (DDR3-2133) → Marking: -093

1.07ns @ CL = 13 (DDR3-1866) → Marking: -107

1.25ns @ CL = 11 (DDR3-1600) → Marking: -125

Special Options

Premium Lifecycle Product (PLP) → Marking: X

Operating temperature

Commercial (0°C ≤ T_C ≤ +95°C) → Marking: None

Industrial (–40°C ≤ T_C ≤ +95°C) → Marking: IT

Revision

→ Marking: P

Table 1 presents the key timing parameters for different memory speed grades. The -093 speed grade, which supports a data rate of 2133 MT/s, features a target tRCD-tRP-CL timing of 14-14-14, with each of tRCD, tRP, and CL measured at 13.09 ns, and it is backward compatible to 1866 MT/s with CL=13 (-107) and also to 1600 MT/s with CL=11 (-125). The -107 speed grade operates at a data rate of 1866 MT/s, with a target timing of 13-13-13 and all three parameters tRCD, tRP, and CL equal to 13.91 ns, and it is backward compatible to 1600 MT/s with CL=11 (-125). The -125 speed grade has a data rate of 1600 MT/s, a target timing of 11-11-11, and tRCD, tRP, and CL all at 13.75 ns.

Table 2 outlines the addressing parameters for three different memory configurations: 1 Gig x 4, 512 Meg x 8, and 256 Meg x 16. For the 1 Gig x 4 configuration, the structure is 128 Meg x 4 x 8 banks, with an 8K refresh count, a 64K row address spanning A[15:0], an 8-bank address using BA[2:0], a 2K column address covering A[11, 9:0], and a 1KB page size. The 512 Meg x 8 configuration is structured as 64 Meg x 8 x 8 banks, sharing the same 8K refresh count, 64K row address (A[15:0]), and 8-bank address (BA[2:0]) as the 1 Gig x 4 variant, while featuring a 1K column address (A[9:0]) and a 1KB page size. The 256 Meg x 16 configuration has a 32 Meg x 16 x 8 banks structure, an identical 8K refresh count and 8-bank address (BA[2:0]), a 32K row address spanning A[14:0], a 1K column address (A[9:0]), and a larger 2KB page size.

MT41K256M16TW-107:P Micron Chips 1.35V DDR3L 512MB 96-ball FBGA PC3L-1866

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products details

MT41K256M16TW-107:P Micron Chips 1.35V DDR3L 512MB 96-ball FBGA PC3L-1866

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips