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IRFP4229PBF Infineon Chip Advanced Process Technology Key Parameters Optimized for PDP Sustain Energy Recovery and Pass Switch Applications

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IRFP4229PBF Infineon Chip Advanced Process Technology Key Parameters Optimized for PDP Sustain Energy Recovery and Pass Switch Applications

Brand Name:	Infineon Chip
Model Number:	IRFP4229PBF
MOQ:	2500
Packaging Details:	2500PCS/reel
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Document:

Model:

IRFP4229PBF

Product Name:

Infineon Chip

Type:

Through Hole

Continuous Drain Current:

Operating Temperature:

- 40 °C ~ + 175 °C

Power Dissipation:

310 W

Drain-source Breakdown Voltage:

250 V

Supply Ability:

100000

Highlight:

IRFP4229PBF

IRFP4229 Infineon Chip

Pass Switch Application MOSFET

Product Description

Infineon Chip IRFP4229PBF Advanced Process Technology Key Parameters Optimized for PDP Sustain

Features

Advanced Process Technology

Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Low QG for Fast Response

High Repetitive Peak Current Capability for Reliable Operation

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for Improved Ruggedness

Repetitive Avalanche Capability for Robustness and Reliability

Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in

Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon

area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high

repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable

device for PDP driving applications

Absolute Maximum Ratings

Thermal Resistance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

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products details

IRFP4229PBF Infineon Chip Advanced Process Technology Key Parameters Optimized for PDP Sustain Energy Recovery and Pass Switch Applications

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips