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Multi Speed DDR3L MT41K256M16TW-107:P Micron Chips 8-Bank 1.35V Low Voltage SDRAM

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Multi Speed DDR3L MT41K256M16TW-107:P Micron Chips 8-Bank 1.35V Low Voltage SDRAM

Brand Name:	Micron
Model Number:	MT41K256M16TW-107:P
MOQ:	500PCS
Packaging Details:	500PCS/reel
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Document:

Product Name:

Micron

Model:

MT41K256M16TW-107:P

Data Bus Width:

16 Bit

Maximum Clock Frequency:

933 MHz

Power Supply Voltage:

1.283 V-1.45 V

Operating Temperature:

0 °C~+ 95 °C

Type:

SMD/SMT

Supply Ability:

10000

Highlight:

MT41K256M16TW-107:P

DDR3L SDRAM Micron Chips

8 Bank Micron Chips

Product Description

Micron chips MT41K256M16TW-107:P 1.35V/1.5V Compatible, 8-Bank, Multi-Speed

Description

DDR3L SDRAM (1.35V) is a low voltage version of the

DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM

(Die Rev.: E) data sheet specifications when running in

1.5V compatible mode.

Features

• VDD = VDDQ = 1.35V (1.283–1.45V)

• Backward compatible to VDD = VDDQ = 1.5V ±0.075V

– Supports DDR3L devices to be backward com

patible in 1.5V applications

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT)

for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 0°C to +95°C

– 64ms, 8192-cycle refresh at 0°C to +85°C

– 32ms at +85°C to +95°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

Options

Configuration
1 Gig x 4 — 1G4
512 Meg x 8 — 512M8
256 Meg x 16 — 256M16
FBGA package (Pb-free) – x4, x8
78-ball (8mm x 10.5mm) Rev. P — DA
FBGA package (Pb-free) – x16
96-ball (8mm x 14mm) Rev. P — TW
Timing – cycle time
938ps @ CL = 14 (DDR3-2133) — -093
1.07ns @ CL = 13 (DDR3-1866) — -107
1.25ns @ CL = 11 (DDR3-1600) — -125
Special Options
Premium Lifecycle Product (PLP) — X
Operating temperature
Commercial (0°C ≤ TC ≤ +95°C) — None
Industrial (–40°C ≤ TC ≤ +95°C) — IT
Revision — P

This table outlines the key timing parameters of Micron DDR3L SDRAM across three speed grades: -093 (2133 MT/s, 14-14-14 timing, 13.09ns tRCD/tRP/CL), -107 (1866 MT/s, 13-13-13 timing, 13.91ns tRCD/tRP/CL), and -125 (1600 MT/s, 11-11-11 timing, 13.75ns tRCD/tRP/CL). It also notes backward compatibility: -093 supports 1866 MT/s (CL=13) and 1600 MT/s (CL=11), while -107 supports 1600 MT/s (CL=11).

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products details

Multi Speed DDR3L MT41K256M16TW-107:P Micron Chips 8-Bank 1.35V Low Voltage SDRAM

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips