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IRFR6215TRPBF Infineon P-Channel MOSFET 175°C Operating Temperature Advanced Process Technology

IRFR6215TRPBF Infineon P-Channel MOSFET 175°C Operating Temperature Advanced Process Technology

Brand Name: Infineon Chip
Model Number: IRFR6215TRPBF
MOQ: 2500
Packaging Details: 2500PCS/reel
Payment Terms: T/T
Detail Information
Place of Origin:
China
Model:
IRFR6215TRPBF
Product Name:
Infineon Chip
Operating Temperature:
- 55 °C ~ + 175 °C
Power Dissipation:
110 W
Type:
SMD/SMT
Continuous Drain Current:
13 A
Drain-source Breakdown Voltage:
150 V
Supply Ability:
100000
Highlight:

IRFR6215TRPBF

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IRFR6215 Infineon P-Channel MOSFET

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Advanced Process P-Channel MOSFET

Product Description

Infineon Chip IRFR6215TRPBF P-Channel 175°C Operating Temperature Advanced Process Technology


P-Channel
175°C Operating Temperature 
Surface Mount (IRFR6215) 
Straight Lead (IRFU6215) 
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs are
well known for, provides the designer with an extremely efficient device
for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase,
infrared, or wave soldering techniques. The straight lead version
(IRFU series) is for through-hole mounting applications. Power
dissipation levels up to 1.5 watts are possible in typical surface
mount applications.

Absolute Maximum Ratings
 IRFR6215TRPBF Infineon P-Channel MOSFET 175°C Operating Temperature Advanced Process Technology

Thermal Resistance
IRFR6215TRPBF Infineon P-Channel MOSFET 175°C Operating Temperature Advanced Process Technology

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IRFR6215TRPBF Infineon P-Channel MOSFET 175°C Operating Temperature Advanced Process Technology