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Infineon Chip
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IPT017N12NM6 Infineon OptiMOS 6 MOSFET 120 V High avalanche energy rating

IPT017N12NM6 Infineon OptiMOS 6 MOSFET 120 V High avalanche energy rating

Brand Name: Infineon Chip
Model Number: IPT017N12NM6
MOQ: 2500
Packaging Details: 2500PCS/reel
Payment Terms: T/T
Detail Information
Place of Origin:
China
Model:
IPT017N12NM6
Product Name:
Infineon Chip
Operating Temperature:
- 55 °C ~ + 175 °C
Power Dissipation:
395 W
Type:
SMD/SMT
Continuous Drain Current:
331 A
Supply Ability:
100000
Highlight:

IPT017N12NM6 Infineon OptiMOS 6 MOSFET

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120V OptiMOS 6

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High Avalanche Energy OptiMOS 6

Product Description

Infineon Chip IPT017N12NM6 OptiMOSTM 6 Power-Transistor, 120 V High avalanche energy rating


Features
N-channel, normal level 
Very lowon-resistance RDS(on)
Excellent gate charge x RDS(on)
product(FOM) 
Very low reverse recovery charge(Qrr)
High avalanche energy rating 
175°C operating temperature 
Optimized for high frequency switching 
Pb-free lead plating; RoHS compliant 
Halogen-free according to IEC61249-2-21 
MSL 1 classified according to J-STD-020

Product validation
Fully qualified according to JEDEC for Industrial Applications

Maximum ratings 
at TA=25 °C, unless otherwise specified
IPT017N12NM6 Infineon OptiMOS 6 MOSFET 120 V High avalanche energy rating

Thermal characteristics
IPT017N12NM6 Infineon OptiMOS 6 MOSFET 120 V High avalanche energy rating