Τσιπάκια TI LMG3410R070RWHR LMG341xR070 600V 70mΩ GaN Ενσωματωμένη προστασία οδηγού

TI Chips LMG3410R070RWHR LMG341xR070 600-V 70-mΩ GaN με Ολοκληρωμένο Οδηγό και Προστασία

Χαρακτηριστικά
• TIGaNProcess Qualified Through Accelerated
Reliability In-application Hard-switching Mission
Profiles
• Enables High Density Power Conversion Designs– Superior System Performance Over Cascode
or Stand-alone GaN FETs– LowInductance 8mm x 8mm QFN Package for
Ease of Design, and Layout– Adjustable Drive Strength for Switching
Performance and EMI Control– Digital Fault Status Output Signal– Only +12 V Unregulated Supply Needed
• Integrated Gate Driver– Zero Common Source Inductance– 20nsPropagation Delay for MHz Operation– Process-tuned Gate Bias Voltage for Reliability– 25to 100V/ns User Adjustable Slew Rate
• Robust Protection– Requires No External Protection Components– Over-current Protection with <100ns Response–>150V/ns Slew Rate Immunity– Transient Overvoltage Immunity– Overtemperature Protection– UVLOProtection on All Supply Rails
• Device Options:– LMG3410R070: Latched Overcurrent
Protection– LMG3411R070: Cycle-by-cycle Overcurrent
Protection

 Εφαρμογές
• High Density Industrial and Consumer Power
Supplies
• Multi-level Converters
• Solar Inverters
• Industrial Motor Drives
• Uninterruptable Power Supplies
• High Voltage Battery Chargers

Περιγραφή
The LMG341xR070 GaN power stage with integrated
driver and protection enables designers to achieve
new levels of power density and efficiency in power
electronics systems. The LMG341x’s inherent
advantages over silicon MOSFETs include ultra-low
input and output capacitance, zero reverse recovery
to reduce switching losses by as much as 80%, and
low switch node ringing to reduce EMI. These
advantages enable dense and efficient topologies like
the totem-pole PFC.
The LMG341xR070 provides a smart alternative to
traditional cascode GaN and standalone GaN FETs
by integrating a unique set of features to simplify
design, maximize reliability and optimize the
performance of any power supply. Integrated gate
drive enables 100V/ns switching with near zero Vds
ringing, <100 ns current limiting self-protects against
unintended shoot-through events, Overtemperature
shutdown prevents thermal runaway, and system
interface signals provide self-monitoring capability.