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IPW65R110CFDA Infineon Chip Metal Oxide Semiconductor Field Effect Transistor

IPW65R110CFDA Infineon Chip Metal Oxide Semiconductor Field Effect Transistor

Brand Name: Infineon Chip
Model Number: IPW65R041CFD
MOQ: 2500
Packaging Details: 2500PCS/reel
Payment Terms: T/T
Detail Information
Place of Origin:
China
Model:
IPW65R041CFD
Product Name:
Infineon Chip
Operating Temperature:
- 40 °C ~ + 150 °C
Power Dissipation:
277.8 W
Installation Style:
Through Hole
Continuous Drain Current:
31.2 A
Supply Ability:
100000
Highlight:

IPW65R110CFDA Infineon Chip

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Metal Oxide Semiconductor Transistor

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Field Effect Transistor

Product Description

Infineon Chip IPW65R110CFDA Metal Oxide Semiconductor Field Effect Transistor 


Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFDA series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler.

Features

Ultra-fast body diode

Very high commutation ruggedness

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Easy to use/drive

Qualified according to AEC Q101

Green package (RoHS compliant), Pb-free plating, halogen free for mold compound


Applications

650V CoolMOS™ CFDA is designed for switching applications.

IPW65R110CFDA Infineon Chip Metal Oxide Semiconductor Field Effect Transistor


Maximum ratings
at Tj = 25°C, unless otherwise specified
IPW65R110CFDA Infineon Chip Metal Oxide Semiconductor Field Effect Transistor

Thermal characteristics
IPW65R110CFDA Infineon Chip Metal Oxide Semiconductor Field Effect Transistor