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Infineon Chip
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IRFB38N20DPBF Infineon Chip Low Gate to Drain Charge to Reduce Switching Losses

IRFB38N20DPBF Infineon Chip Low Gate to Drain Charge to Reduce Switching Losses

Brand Name: Infineon Chip
Model Number: IRFB38N20DPBF
MOQ: 2500
Packaging Details: 2500PCS/reel
Payment Terms: T/T
Detail Information
Place of Origin:
China
Model:
IRFB38N20DPBF
Product Name:
Infineon Chip
Type:
Through Hole
Continuous Drain Current:
44 A
Operating Temperature:
- 55 °C ~ + 175 °C
Power Dissipation:
3.8 W
Supply Ability:
100000
Highlight:

IRFB38N20DPBF

,

IRFB38N20D Infineon Chip

,

Switching Losses MOSFET

Product Description

Infineon Chip IRFB38N20DPBF Low Gate-to-Drain Charge to Reduce Switching Losses 


Applications
High frequency DC-DC converters
Plasma Display Panel

Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS
to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
Lead-Free

IRFB38N20DPBF Infineon Chip Low Gate to Drain Charge to Reduce Switching Losses

IRFB38N20DPBF Infineon Chip Low Gate to Drain Charge to Reduce Switching Losses

Absolute Maximum Ratings
IRFB38N20DPBF Infineon Chip Low Gate to Drain Charge to Reduce Switching Losses

Thermal Resistance
IRFB38N20DPBF Infineon Chip Low Gate to Drain Charge to Reduce Switching Losses

Static @ TJ = 25°C (unless otherwise specified)
IRFB38N20DPBF Infineon Chip Low Gate to Drain Charge to Reduce Switching Losses

Dynamic @ TJ = 25°C (unless otherwise specified)
IRFB38N20DPBF Infineon Chip Low Gate to Drain Charge to Reduce Switching Losses