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Infineon Chip
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IPA50R190CE Infineon Chip Reduced stored energy of output capacitance Eₒₛₛ Highly robust body diode

IPA50R190CE Infineon Chip Reduced stored energy of output capacitance Eₒₛₛ Highly robust body diode

Brand Name: Infineon Chip
Model Number: IPA50R190CE
MOQ: 2500
Packaging Details: 2500PCS/reel
Payment Terms: T/T
Detail Information
Place of Origin:
China
Model:
IPA50R190CE
Product Name:
Infineon Chip
Type:
Through Hole
Continuous Drain Current:
24.8 A
Drain-source Breakdown Voltage:
500 V
Operating Temperature:
- 40 °C ~ + 150 °C
Power Dissipation:
32 W
Supply Ability:
100000
Highlight:

IPA50R190CE

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IPA50R190C Infineon Chip

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Output Capacitance Energy MOSFET

Product Description

Infineon Chip IPA50R190CE Reduced stored energy of output capacitance (Eₒₛₛ) Highly robust body diode


Features and Benefits
Reduced stored energy of output capacitance (Eₒₛₛ)
Highly robust body diode
Reduced reverse recovery charge (Qᵣᵣ)
Reduced gate charge
Overall performance
Lower switching loss, improved light-load efficiency
Higher reliability under harsh operating conditions
Less prone to hard commutation in resonant topologies
Improved light-load efficiency
Less gate drive capability required
Easy switching operation control
Proven CoolMOS™ quality for outstanding reliability

Target Applications and Topologies
IPA50R190CE Infineon Chip Reduced stored energy of output capacitance Eₒₛₛ Highly robust body diode