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CUN0HB4A SEOUL LED Chip Near UV 405nm UV CU6868 Series LED Diode Chip

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CUN0HB4A SEOUL LED Chip Near UV 405nm UV CU6868 Series LED Diode Chip

Brand Name:	SEOUL
Model Number:	CUN0HB4A
MOQ:	500PCS
Packaging Details:	500
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Document:

Product Name:

SEOUL

Model:

CUN0HB4A

Type:

High-power SMD Near-ultraviolet LED

Storage Temperature:

-40-100℃

Forward Voltage:

Rated Value 7.3V

Application:

UV Curing，Printing，Coating，Adhesive，Fluorescence Photography

Supply Ability:

100000

Highlight:

CUN0HB4A UV LED Diode Chip

SEOUL LED Chip CU6868 Series

405nm Near UV LED Diode Chip

Product Description

Seoul Near UV LED-CUN0HB4A 405nmUV CU6868 series-CUN0HB4A led diodes chips

Product Brief

Description

• High power UV LED series are designed for

high current operation and ultra high power

output applications.

• It incorporates with the state of the art SMD

design and low thermal resistant material.

Features and Benefits

• Low thermal resistance

• SMT type

• Designed for high current operation

Key Applications

• UV Curing

• Printing

• Coating

• Adhesive

• Fluorescence Photography

• UV Torch

• Fluorescence Photography

• Dental Curing

• Crime Inspection

• Oil leak Detection

This high-power LED device exhibits key electro-optical performance at a forward current of 2A (under test conditions of ): it features a peak wavelength of 405 nm, a radiant flux of 6.1 W, a forward voltage of 7.3 V, a spectral half-width of 17 nm, and a radiation angle of 70 degrees. Its absolute maximum ratings include a minimum forward current of 0.4 A (typical 2.0 A), a maximum junction temperature of 125 °C, an operating temperature range of −10 °C to 85 °C, a storage temperature range of −40 °C to 100 °C, and a thermal resistance (junction to solder point) of 1.8 °C/W.

At a forward current of 2A, this LED follows a structured binning system defined by three key parameters: peak wavelength (Wp), radiant flux, and forward voltage (Vf). For peak wavelength, there are two bins: P1 (400–405 nm) and P2 (405–410 nm). For radiant flux, two bins are available: T55 (5.56–6.12 W) and T61 (6.12–6.73 W). For forward voltage, three bins are defined: Z70 (7.0–7.2 V), Z72 (7.2–7.4 V), and Z74 (7.4–7.6 V). The binning code is structured such that segments Z₁Z₂ denote peak wavelength (nm), Z₃Z₄Z₅ represent radiant flux (W), and Z₆Z₇Z₈ indicate forward voltage (V), enabling precise component selection for specific application requirements.

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products details

CUN0HB4A SEOUL LED Chip Near UV 405nm UV CU6868 Series LED Diode Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips