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SEOUL LED Chip
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CUN8UB1A SEOUL LED Chip Near UV 385nm UV CU3737 Series LED Diode Chip

CUN8UB1A SEOUL LED Chip Near UV 385nm UV CU3737 Series LED Diode Chip

Brand Name: SEOUL
Model Number: CUN8UB1A
MOQ: 500PCS
Packaging Details: 500
Payment Terms: T/T
Detail Information
Place of Origin:
China
Product Name:
SEOUL
Model:
CUN8UB1A
Application:
Fluorescence Photography,Dental Curing,Crime Inspection,Oil Leak Detection
Operating Temperature:
-40~105℃
Storage Temperature:
-40~100℃
Forward Voltage:
3.5V
Peak Wavelength:
385nm
Supply Ability:
100000
Highlight:

CUN8UB1A UV LED Diode Chip

,

SEOUL LED Chip CU3737 Series

,

385nm UV LED Diode Chip

Product Description

SEOUL Near UV LED - 385nm UV CU3737 series CUN8UB1A  led diodes chips


Product Brief
Description
• High power UV LED series are designed for
high current operation, narrow radiation angle
and high power output applications.
• It incorporates with the state of the art SMD
design and low thermal resistant material.
• CU3737 is an ideal UV light source for
curing, printing, and detecting applications.

Features and Benefits
• Low thermal resistance
• SMT type
• Designed for high current operation

Key Applications
• UV Curing
• Printing
• Coating
• Adhesive
• Fluorescence Photography
• UV Torch
• Fluorescence Photography
• Dental Curing
• Crime Inspection
• Oil leak Detection

This device exhibits key electro-optical and absolute maximum ratings under specified conditions. At a forward current of 0.7A, with a solder point temperature and relative humidity RH = 30%, its electro-optical characteristics include a peak wavelength of 385 nm, a radiant flux of 1.1 W, a forward voltage of 3.5 V, a spectrum half width of 10.5 nm, and a radiation angle of 60 degrees. For absolute maximum ratings, the forward current has a minimum of 0.2 A, a typical value of 0.7 A, and a maximum of 1.0 A; the maximum junction temperature is 120 , the operating temperature ranges from -40 to 105 , the storage temperature ranges from -40 to 100 , and the thermal resistance from junction to solder point is typically 4.5 .
CUN8UB1A SEOUL LED Chip Near UV 385nm UV CU3737 Series LED Diode Chip

The binning structure at a forward current of categorizes devices based on three key parameters: peak wavelength (, unit: nm), radiant flux (, unit: W), and forward voltage (, unit: V). For peak wavelength, the bins are defined as m1 spanning 380 to 385 nm and m2 covering 385 to 390 nm. For radiant flux, the bins include Q00 (1.00–1.10 W), Q10 (1.10–1.21 W), and Q21 (1.21–1.33 W). For forward voltage, the bins range as follows: Z4 (3.3–3.4 V), Z5 (3.4–3.5 V), Z6 (3.5–3.6 V), and Z7 (3.6–3.7 V).

In summary, the binning code system maps directly to specific parameter ranges: corresponds to peak wavelength (nm), to radiant flux (W), and  to forward voltage (V), providing a clear framework for device classification.
CUN8UB1A SEOUL LED Chip Near UV 385nm UV CU3737 Series LED Diode Chip