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CUN8GF1A SEOUL LED Chip Near UV 385nm UV CA3535 Series LED Diode Chip

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CUN8GF1A SEOUL LED Chip Near UV 385nm UV CA3535 Series LED Diode Chip

Brand Name:	SEOUL
Model Number:	CUN8GF1A
MOQ:	500PCS
Packaging Details:	500
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Document:

Product Name:

SEOUL

Model:

CUN8GF1A

Application:

Fluorescence Photography, Dental Curing, Crime Inspection, Oil Leak Detection

Peak Wavelength:

385nm

Packaging Series:

CA3535

Type:

High-power Near-ultraviolet LED

Operating Temperature:

-40~100℃

Storage Temperature:

-40~100℃

Supply Ability:

100000

Highlight:

CUN8GF1A UV LED Diode Chip

SEOUL LED Chip CA3535 385nm

Near UV LED Diode Chip

Product Description

SEOUL Near UV LED - 385nm UV CA3535 series CUN8GF1A led diodes chips

Product Brief

Description

• High power UV LED series are designed

for high current operation and high power

output applications.

• It incorporates with the state of the art SMD

design and low thermal resistant material.

• CA3535 is an ideal UV light source for

curing, printing, and detecting applications.

Features and Benefits

• Super high power output

• Designed for high current operation

• Low thermal resistance

• SMT type

• Lead Free product

• RoHS compliant

Key Applications

• UV Curing

• Printing

• Coating

• Adhesive

• UV Torch

• Fluorescence Photography

• Dental Curing

• Crime Inspection

• Oil leak Detection

The LED device under test conditions of and relative humidity (RH) = 30% at a forward current of 1A, the electro-optical and absolute maximum rating parameters are comprehensively outlined as follows. In Table 1, the electro-optical characteristics reveal that the device exhibits a peak wavelength () of 385 nm, a radiant flux () of 1.65 W, a forward voltage () of 3.6 V, a spectrum half width () of 11 nm, and a radiation angle () of 115 degrees. These values collectively define the core optical and electrical performance of the component under the specified operating current.

Moving to Table 2, the absolute maximum ratings establish the safe operational and storage boundaries for the device. The forward current () has a minimum rating of 0.2 A, a typical value of 1.0 A, and a maximum limit of 1.4 A, ensuring the device operates within a controlled current range. The junction temperature () is capped at 125°C, while both the operating temperature () and storage temperature () span from -40°C to 100°C, highlighting the device’s robustness across extreme environmental conditions. Additionally, the thermal resistance from the junction to the solder point () is specified at 3.8 °C/W, a critical parameter that governs the device’s thermal management capabilities and overall reliability. Together, these specifications provide a complete framework for evaluating the device’s performance, operational limits, and thermal behavior in practical applications.

The LED device under a forward current , as presented in Tables 3 and 4. Table 4 first clarifies the meaning of the binning codes: corresponds to Peak Wavelength (measured in nm), represents Radiant Flux (in W), and denotes Forward Voltage (in V), establishing a clear framework for categorizing device performance across three critical parameters.

Table 3 then elaborates on the specific binning ranges for each parameter. For peak wavelength (under ), there are two primary bins: m1 spans from 380 nm to 385 nm, while m2 covers 385 nm to 390 nm, ensuring precise wavelength grouping for applications requiring consistent spectral output. In terms of radiant flux (under ), two flux bins are defined: Q60 ranges from 1.60 W to 1.76 W, and Q76 extends from 1.76 W to 1.94 W, allowing for classification based on optical power output. For forward voltage (under ), three voltage bins are specified: Z4 (3.3 V to 3.4 V), Z5 (3.4 V to 3.5 V), and Z6 (3.5 V to 3.6 V), which enable sorting devices by their electrical operating voltage characteristics. Together, this binning structure provides a systematic method to classify individual LED devices according to their peak wavelength, radiant flux, and forward voltage, ensuring consistency and compatibility in end-use applications by grouping components with tightly controlled performance parameters.

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products details

CUN8GF1A SEOUL LED Chip Near UV 385nm UV CA3535 Series LED Diode Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips