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AMS -OSRAM GH CSSPM1.24 Smd Led chip diode High Power 3W OSLON 3030 SSL Hyper Red 635-666 nm

AMS -OSRAM GH CSSPM1.24 Smd Led chip diode High Power 3W OSLON 3030 SSL Hyper Red 635-666 nm

Brand Name: AMS-OSRAM
Model Number: GH CSSPM1.24
MOQ: 3000PCS
Packaging Details: 3000PCS/reel
Payment Terms: T/T
Detail Information
Place of Origin:
MY/CN/TW
Color Temperature(CCT):
635-666 Nm
Luminous Efficacy(lm/w):
115
Color Temperature:
660nm
Emitting Color:
Red
Input Voltage(V):
2.6V
Luminous Flux(lm):
475 MW
Luminous Intensity:
178-256
Power:
1-3W
Application:
Agriculture & Horticulture-- Indoor Lighting- Entertainment
Forward Current:
1000mA
SIZE:
3030
Supply Ability:
100000
Highlight:

CSSPM1.24 OSRAM Hyper Red LED

,

3030 3W OSRAM Hyper Red LED

,

666nm 3030 OSRAM Hyper Red LED

Product Description

 

AMS -OSRAM GH CSSPM1.24 Smd Led chip diode High Power 3W OSLON 3030 SSL Hyper Red 635-666 nm
AMS -OSRAM GH CSSPM1.24 Smd Led chip diode High Power 3W OSLON 3030 SSL Hyper Red 635-666 nm
Product name
GH CSSPM1.24
Brand
CREE
Applications
- Agriculture & Horticulture- Entertainment-- Indoor Lighting- Outdoor & Industrial Lighting
Package
 SMT ceramic package with silicone lens
Forward current
1000mA
Centroid Wavelengt
646nm--666nm
 Forward Voltage
2.6V
Power:
1-3W 

 

AMS -OSRAM GH CSSPM1.24 Smd Led chip diode High Power 3W OSLON 3030 SSL Hyper Red 635-666 nm

 

GH CSSPM1.24
OSLON®SSL 120
New, higher performing OSLON SSL family LED with
well known superior robustness, high reliability, long
lifetime, low thermal resistance. Perfectly addressing
applications demanding for high efficiency and long
lifetime requirement.

 

Applications
Architecture
Horticulture Lighting
 
Features
Package: SMT ceramic package with silicone lens
Typ. Radiation: 120° (Lambertian emitter)
ESD: 8 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B)
Radiant Flux: typ. 475 mW
Radiant Efficiency: typ. 65 %
Photosynthetic Photon Flux: typ. 2.58 μmol/s
 
1.This section presents the Maximum Ratings for the OSRAM GH CSSPM1.24 device, defining its safe operating limits. The operating temperature range () spans from a minimum of to a maximum of , matching the storage temperature range () which also extends from to . The maximum allowable junction temperature () is specified as , ensuring thermal stability during operation. For current ratings, the forward current () has a minimum value of and a maximum of , while the surge current () is rated at a maximum of , measured with a pulse duration , duty cycle , and junction temperature . The maximum reverse current () is limited to , and the device provides an ESD withstand voltage () of , compliant with the ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) standard, delivering robust electrostatic discharge protection for reliable performance in demanding environments.
 
2.This section presents the Characteristics of the OSRAM GH CSSPM1.24 device, measured under the conditions of and . In terms of optical performance, the device has a typical peak wavelength () of 660 nm, while the centroid wavelength () ranges from a minimum of 646 nm to a maximum of 666 nm, with a typical value of 657 nm at . The dominant wavelength () is 640 nm (typical) under the same forward current, and the spectral bandwidth () at 50% relative maximum intensity is 25 nm (typical), with a wide viewing angle () of 120° (typical) at 50% luminous intensity. For electrical characteristics, the forward voltage () at spans from a minimum of 1.80 V to a maximum of 2.60 V, with a typical value of 2.07 V; the maximum reverse voltage () at is specified as 1.2 V. Additionally, the electrical thermal resistance from the junction to the solder point () is 2.4 K/W (typical), achieved with an efficiency () of 55%, supporting effective thermal management during operation
 
3.This section of the OSRAM GH CSSPM1.24 datasheet outlines the Brightness Groups, defined by key optical and efficiency metrics measured at . Three brightness groups are specified: 4T, 1U, and 2U, each with distinct ranges for total radiant flux (), Photosynthetic Photon Flux (PPF, ), and Photon Flux (PF, ). Group 4T has a total radiant flux range of 400–450 mW, with PPF spanning 2.17–2.44 µmol/s (typical PPF/W of 3.14 µmol/J) and PF spanning 2.18–2.45 µmol/s (typical PF/W of 3.14 µmol/J). Group 1U covers a total radiant flux of 450–500 mW, with PPF of 2.44–2.71 µmol/s (typical PPF/W of 3.50 µmol/J) and PF of 2.45–2.72 µmol/s (typical PF/W of 3.51 µmol/J). The highest-performing group, 2U, offers a total radiant flux of 500–560 mW, PPF of 2.71–3.04 µmol/s (typical PPF/W of 3.91 µmol/J), and PF of 2.72–3.05 µmol/s (typical PF/W of 3.92 µmol/J). Accompanying notes clarify that PPF ([*]) accounts for wavelengths between 400 and 700 nm, while PF ([**]) includes wavelengths from 280 to 800 nm, and both PPF and PF values are provided for reference only, ensuring clear context for the photon flux measurements.
 
4.This section details the Centroid Wavelength grouping for the OSRAM GH CSSPM1.24 device, measured at a forward current . A single centroid wavelength group, designated as Group 1, is specified, covering a range from a minimum of 646 nm to a maximum of 666 nm for the centroid wavelength (). This unified grouping ensures that all devices within this category maintain consistent spectral centroid performance, aligning with the typical centroid wavelength value of 657 nm outlined in the device’s core characteristics, and providing a clear reference for the device’s optical spectral behavior under the defined operating condition.

 

 

5.This section outlines the Forward Voltage Groups for the OSRAM GH CSSPM1.24 device, defined by forward voltage () ranges measured at a forward current . Four distinct voltage groups are specified to categorize devices based on their electrical performance: Group F covers a forward voltage range from 1.80 V to 2.00 V, Group G spans 2.00 V to 2.20 V, Group H ranges from 2.20 V to 2.40 V, and Group J extends from 2.40 V to 2.60 V. These groupings enable precise binning of devices, ensuring consistent forward voltage characteristics within each packing unit, aligning with the overall forward voltage limits (minimum 1.80 V, maximum 2.60 V) outlined in the device’s core characteristics, and supporting reliable integration into target applications by providing clear, segmented electrical performance benchmarks.