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OPA657N/250 TI Chips OPA657 1.6 GHz Low Noise FET Input Operational Amplifier

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OPA657N/250 TI Chips OPA657 1.6 GHz Low Noise FET Input Operational Amplifier

Brand Name:	TI Chips
Model Number:	OPA657N/250
MOQ:	500
Packaging Details:	500PCS/reel
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Model:

OPA657N/250

Product Name:

TI Chips

Type:

SMD/SMT

Slew Rate:

700 V/us

Input Bias Current:

20 PA

Operating Power Supply Current:

14 MA

Supply Ability:

1000000

Highlight:

OPA657N/250 OPA657

TI Chips OPA657

FET Input Operational Amplifier

Product Description

TI Chips OPA657N/250 OPA657 1.6-GHz, Low-Noise, FET-Input Operational Amplifier

Features

High Gain Bandwidth Product: 1.6 GHz

High Bandwidth 275 MHz (G = 10)

Slew Rate 700 V/μs (G = 10, 1-V Step)

Available in High Grade With Improved DC Specifications

Operating Temperature Range: −40°C to 85°C

Low-Input Offset Voltage: ±250 μV

Low-Input Bias Current: 2 pA

Low-Input Voltage Noise: 4.8 nV/√Hz

High-Output Current: 70 mA

Fast Overdrive Recovery

Applications

Wideband Photodiode Amplifier

Wafer Scanning Equipment

ADC Input Amplifier

Test and Measurement Front End

High Gain Precision Amplifier

Optical Time Domain Reflectometry (OTDR)

Description

The OPA657 device combines a high-gain bandwidth, low-distortion, voltage-feedback operational amplifier with a low-voltage noise JFET-input stage to offer a very high dynamic range amplifier for high-precision ADC (analog-to-digital converter) driving or wideband transimpedance applications. Photodiode applications see improved noise and bandwidth using this decompensated, high-gain bandwidth amplifier.

Very low level signals can be significantly amplified in a single OPA657 gain stage with exceptional bandwidth and accuracy. Having a high 1.6-GHz gain bandwidth product gives greater than 10-MHz signal bandwidths up to gains of 160 V/V (44 dB). The very low input bias current and capacitance supports this performance even for relatively high source impedances.

Broadband photodetector applications benefit from the low-voltage noise JFET inputs for the OPA657. The JFET input contributes virtually no current noise while for broadband applications, a low voltage noise is also required. The low 4.8 nV/√Hz input voltage noise provides exceptional input sensitivity for higher bandwidth applications. The example shown below gives a total equivalent input noise current of 1.8 pA/√Hz over a 10-MHz bandwidth.

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products details

OPA657N/250 TI Chips OPA657 1.6 GHz Low Noise FET Input Operational Amplifier

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips