Infineon Chip IR2085STRPBF Using monolithic high-voltage gate drivers
Introduction
This document highlights the most common subjects driving a half-bridge power stage in motor drive
applications (with monolithic IC gate driver) and to suggest appropriate solutions to solve the issues.
Topics such as the sizing of some fundamental components, as bootstrap circuit and on/off gate resistors; and
half-bridge parasitic elements with their effects are discussed. Some possible solutions are proposed and
finally, some layout tips are presented.
All the situations and the solutions proposed are, unless otherwise specified, for a typical Infineon monolithic
gate driver with floating bootstrap supply
The bootstrap circuit
The bootstrap supply is formed by a diode and a capacitor connected as shown in Figure 1.
This method has the advantage of being simple and low cost, but may force some limitations on duty-cycle and
on-time as they are limited by the requirement to refresh the charge in the bootstrap capacitor.
Choosing an appropriate capacitor can drastically reduce these limitations.
Bootstrap capacitor sizing
To size the bootstrap capacitor, the first step is to establish the minimum voltage drop (ΔVBS) that is guaranteed when the high-side IGBT is on. If VGEmin is the minimum gate emitter voltage to maintain, the voltage drop must be:
under the condition:
Here, VCC is the IC voltage supply, VF is bootstrap diode forward voltage, VCEon is emittercollector voltage of the low-side IGBT, and VBSUV-
is the high-side supply undervoltage negative going threshold.