NeXperia chips BC817-25,215 NPN General-Purpose Transistor 45V 500mA 3 Current Gain Selections
General description
NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)
plastic package.
Features and benefits
• High current
• Three current gain selections
Applications
• General-purpose switching and amplification
This table provides quick reference data for the BC817 series NPN transistors. At 25 °C ambient temperature, the collector-emitter voltage (V<sub>CEO</sub>) reaches a maximum of 45 V with an open base, while the continuous collector current (I<sub>C</sub>) is limited to 500 mA, and the peak collector current (I<sub>CM</sub>) for single pulses (≤1 ms) is 1 A. The DC current gain (h<sub>FE</sub>) varies by grade: BC817 (100–600), BC817-16 (100–250), BC817-25 (160–400), and BC817-40 (250–600), measured at V<sub>CE</sub> = 1 V, I<sub>C</sub> = 100 mA under pulsed conditions (t<sub>p</sub> ≤ 300 µs, duty cycle ≤ 0.02).
This pinning information details the BC817 series transistor’s 3-pin configuration: Pin 1 is the base (B), Pin 2 is the emitter (E), and Pin 3 is the collector (C). The simplified outline shows the SOT23 package layout with pin 1 at the bottom left, pin 2 at the bottom right, and pin 3 at the top center, while the graphic symbol (sym123) illustrates the standard NPN transistor schematic representation with labeled base, emitter, and collector terminals