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INA333AIDGKR TI Chips INA333 Micro Power 50μA Zerø-Drift Rail to Rail Out Instrumentation Amplifier

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INA333AIDGKR TI Chips INA333 Micro Power 50μA Zerø-Drift Rail to Rail Out Instrumentation Amplifier

Brand Name:	TI Chips
Model Number:	INA333AIDGKR
MOQ:	2500
Packaging Details:	2500PCS/reel
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Document:

Model:

INA333AIDGKR

Product Name:

TI Chips

Type:

SMD/SMT

3dB Bandwidth:

150 KHz

Slew Rate:

160 MV/us

Operating Power Supply Current:

50 UA

Supply Ability:

1000000

Highlight:

INA333AIDGKR

INA333AIDGKR TI Chips

50μA Instrumentation Amplifier

Product Description

TI Chips INA333AIDGKR INA333 Micro-Power (50μA), Zerø-Drift, Rail-to-Rail Out Instrumentation Amplifier

Features
1• Low Offset Voltage: 25 μV (Maximum), G ≥ 100
• Low Drift: 0.1 μV/°C, G ≥ 100
• Low Noise: 50 nV/√Hz, G ≥ 100
• High CMRR: 100 dB (Minimum), G ≥ 10
• Low Input Bias Current: 200 pA (Maximum)
• Supply Range: 1.8 V to 5.5 V
• Input Voltage: (V–) +0.1 V to (V+) –0.1 V
• Output Range: (V–) +0.05 V to (V+) –0.05 V
• Low Quiescent Current: 50 μA
• Operating Temperature: –40°C to +125°C
• RFI Filtered Inputs
• 8-Pin VSSOP and 8-Pin WSON Packages

Applications
• Bridge Amplifiers
• ECG Amplifiers
• Pressure Sensors
• Medical Instrumentation
• Portable Instrumentation
• Weigh Scales
• Thermocouple Amplifiers
• RTD Sensor Amplifiers
• Data Acquisition

Description
The INA333 device is a low-power, precision
instrumentation amplifier offering excellent accuracy.
The versatile 3-operational amplifier design, small
size, and low power make it ideal for a wide range of
portable applications.
A single external resistor sets any gain from 1 to
1000. The INA333 is designed to use an industry-standard gain equation: G = 1 + (100 kΩ / RG).
The INA333 device provides very low offset voltage
(25 μV, G ≥ 100), excellent offset voltage drift
(0.1 μV/°C, G ≥ 100), and high common-mode
rejection (100 dB at G ≥ 10). It operates with power
supplies as low as 1.8 V (±0.9 V) and quiescent
current is only 50 μA, making it ideal for battery-operated systems. Using autocalibration techniques
to ensure excellent precision over the extended
industrial temperature range, the INA333 device also
offers exceptionally low noise density (50 nV/√Hz)
that extends down to DC.
The INA333 device is available in both 8-pin VSSOP
and WSON surface-mount packages and is specified
over the TA = –40°C to +125°C temperature range.

INA333AIDGKR TI Chips INA333 Micro Power 50μA Zerø-Drift Rail to Rail Out Instrumentation Amplifier

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products details

INA333AIDGKR TI Chips INA333 Micro Power 50μA Zerø-Drift Rail to Rail Out Instrumentation Amplifier

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips