UCC27211ADRMR TI Chips UCC27211A 120V 3.7A/4.5A Half Bridge Driver with 8V UVLO

TI Chips UCC27211ADRMR UCC27211A 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO

Features
• –40°C to +150°C junction temperature range
• Drives two N-channel MOSFETs in high-side and 
low-side configuration with independent inputs
• Maximum boot voltage 120V DC
• 3.7A source, 4.5A sink output currents
• Input pins can tolerate –10V to +20V and are 
independent of supply voltage range
• TTL compatible inputs
• 8V to 17V VDD operating range, (20V ABS MAX)
• 7.2ns rise and 5.5ns fall time with 1000pF load
• Fast propagation delay times (20ns typical)
• 4ns delay matching
• Symmetrical undervoltage lockout for high-side 
and low-side driver
• Industry standard package available
– 4mm × 4mm SON-8

Applications
• Solar power optimizers and micro inverters
• Telecom and merchant power supplies
• Online and offline UPS
• Energy storage systems
• Battery test equipment

Description
The UCC27211A device driver is based on the 
popular UCC27201 MOSFET drivers; but, this device 
offers several significant performance improvements.
The peak output pullup and pulldown current has 
been increased to 3.7A source and 4.5A sink and

thereby allows for driving large power MOSFETs 
with minimized switching losses during the transition 
through the Miller Plateau of the MOSFET. The 
input structure can directly handle –10VDC, which 
increases robustness and also allows direct interface 
to gate-drive transformers without using rectification 
diodes. The inputs are also independent of supply 
voltage and have a 20V maximum rating.
The switching node of the UCC27211A (HS pin) 
can handle –(24 - VDD) V maximum, which allows 
the high-side channel to be protected from inherent 
negative voltages caused by parasitic inductance 
and stray capacitance. The UCC27211A (TTL inputs) 
has increased hysteresis that allows for interface 
to analog or digital PWM controllers with enhanced 
noise immunity.
The low-side and high-side gate drivers are 
independently controlled and matched to 4ns between 
the turn on and turn off of each other. An on-chip 
120V rated bootstrap diode eliminates the external 
discrete diodes. Undervoltage lockout is provided for 
both the high-side and the low-side drivers which 
provides symmetric turn on and turn off behavior and 
forces the outputs low if the drive voltage is below the 
specified threshold.