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LH351D Samsung LED Chip 3535 Ceramic High Power 90 CRI High Efficacy 260-740lm 1050mA

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LH351D Samsung LED Chip 3535 Ceramic High Power 90 CRI High Efficacy 260-740lm 1050mA

Brand Name:	Samsung
Model Number:	LH351D
MOQ:	4000
Packaging Details:	4000
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Document:

Product Name:

Samsung

Application:

Street Light, Tunnel Light, Security Light, Area Light, Stadium/Arena Light

Operating Temperature:

-40 ~ +105 °C

LED Junction Temperature:

150 °C Max

Color Rendering Index:

70/80/90

Color Temperature:

2700K / 3000K / 4000K / 5000K / 6500

Luminous Flux:

260–740 Lm @ 1050 MA

Thermal Resistance:

2.2 °C/W

Supply Ability:

1000000000

Highlight:

LH351D Ceramic LED Chip

Samsung LED Chip 3535

90 CRI LED Chip

Product Description

Samsung LED chip LH351D 3535 Ceramic High Power LED 90 CRI High Efficacy 260-740lm @1050mA

High efficacy and high quality color rendering makes the LH351D suitable use in a broad range of applications

Features & Benefits
• Operates at a maximum current of up to 3.0 A
• Uniform light distribution under any beam angle
• 90 CRI makes it well suited for most applications
• Hot binning @ 85 ºC

Applications

• Indoor Lighting: Spotlight, Downlight

• Outdoor Lighting: Street Light, Tunnel Light, Security Light, Area Light, Stadium/Arena Light

• Industrial Lighting: High Bay Light, Low Bay Light

• Consumer Lighting: Torch Light

This LED component features an operating temperature range of -40°C to +105°C, a storage temperature range of -40°C to +120°C, and a maximum LED junction temperature of 150°C. It supports a forward current of up to 3000 mA and a peak pulse forward current of 5000 mA (with a duty cycle of 1/10 and a pulse width of 10ms). The assembly process temperature can reach 260°C for less than 10 seconds, and it has an ESD (HBM) rating of ±8 kV. For proper operation, refer to the derating curve in '3. Typical Characteristics Graph' to ensure the driving current keeps the junction temperature below its maximum limit.

This LED's electro-optical characteristics include a forward voltage of 2.6–3.2 V at 1050 mA and 85°C, a reverse voltage of 14–19.5 V at 5 mA and 25°C, a thermal resistance (junction to solder point) of 2.2 °C/W at 25°C, and a beam angle of 128° at 1050 mA and 25°C. Samsung maintains a measurement tolerance of ±7% for luminous flux and ±0.1 V for forward voltage; characteristics at 25°C are for reference only.

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products details

LH351D Samsung LED Chip 3535 Ceramic High Power 90 CRI High Efficacy 260-740lm 1050mA

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips