products details

Home Products

OSRAM LED Chip

Amber 612-624nm LED 0.5W AMS-OSRAM LA G6SP for 3528 Chip Diode Thinfilm Technology Custom Tuning

All Category

High Power LED Chip

Miss. alice

sales_deng@163.com

+86 18802688921

Contact Now

All Category

Amber 612-624nm LED 0.5W AMS-OSRAM LA G6SP for 3528 Chip Diode Thinfilm Technology Custom Tuning

Brand Name:	ams-osram
Model Number:	LA G6SP
MOQ:	1000PCS
Price:	CN¥1.11-1.66
Packaging Details:	1000PCS/reef
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

MY/CN/TW

Emitting Color:

Amber

Forward Current:

200mA

Input Voltage(V):

Luminous Flux(lm):

26.1 Lm

Luminous Intensity:

70-120

Storage Temperature(℃):

-40 - 110

Type:

Smd LED

Product Name:

LA G6SP

Application:

-Custom Tuning -Interior Illumination (e.g. Ambient Map)--Signalling

Chip Technology:

Thinfilm

Supply Ability:

100000

Highlight:

G6SP OSRAM Chip

3528 0.5W OSRAM Chip

0.5W Amber OSRAM Chip

Product Description

Product name	LA G6SP
BRAND	CREE
Applications	—Custom Tuning —Interior Illumination —Signalling
Luminous Efficacy(lm/w)	84
Forward current	200mA
POWER	0.5W

Amber 612-624nm LED 0.5W AMS-OSRAM LA G6SP for 3528 Chip Diode Thinfilm Technology Custom Tuning

LA G6SP

Advanced Power TOPLED®

Advanced Power TOPLED features a compact pack

age with a wide brightness range and high luminous

efficiency.

Applications

— Custom Tuning

— Interior Illumination (e.g. Ambient Map)

— Signalling

Features:

— Package: white SMT package, colorless clear silicone resin

— Chip technology: Thinfilm

— Typ. Radiation: 120° (Lambertian emitter)

— Color: λdom = 617 nm (● amber)

— Optical efficacy: 84 lm/W

— Corrosion Robustness Class: 3B

— Qualifications: AEC-Q102 Qualified with RV-level 1

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

1.The maximum ratings of the device are defined as follows: The operating temperature () ranges from a minimum of -40 °C to a maximum of 110 °C, while the storage temperature () also spans from -40 °C to 110 °C. The maximum continuous junction temperature () is 125 °C, and the maximum junction temperature for short-time applications is 150 °C (with a median lifetime L70/B50 of 100 h at this temperature). At a solder point temperature () of 25 °C, the forward current () has a minimum rating of 5 mA and a maximum of 200 mA. The maximum surge current () is 1000 mA under conditions of a pulse duration () ≤ 10 μs, a duty cycle () of 0.005, and . The maximum reverse voltage () at is 12 V, and the ESD withstand voltage () is 2 kV, compliant with ANSI/ESDA/JEDEC JS-001 (HBM, Class 2).

2.Under the test conditions of a forward current and solder point temperature , the device exhibits the following key characteristics: The peak wavelength () is typically 625 nm, while the dominant wavelength () ranges from a minimum of 612 nm to a maximum of 624 nm with a typical value of 617 nm. The spectral bandwidth at 50% relative maximum intensity is typically 18 nm, and the viewing angle at 50% luminous intensity () is typically . The forward voltage () at has a minimum of 1.90 V, a typical value of 2.15 V, and a maximum of 2.50 V. At a reverse voltage , the reverse current () has a typical value of 0.01 μA and a maximum of 10 μA. The real thermal resistance from junction to solderpoint () has a typical value of 50 K/W and a maximum of 60 K/W, while the electrical thermal resistance from junction to solderpoint () at an efficiency has a typical value of 34 K/W and a maximum of 41 K/W.

3.At a forward current , the device is categorized into five brightness groups (DA, DB, EA, EB, FA) with defined minimum and maximum luminous intensity () ranges and corresponding typical luminous flux () values: the DA group has a luminous intensity range of 4.5 cd to 5.6 cd with a typical luminous flux of 15.1 lm, the DB group spans 5.6 cd to 7.1 cd with 19.0 lm, the EA group covers 7.1 cd to 9.0 cd with 24.2 lm, the EB group extends from 9.0 cd to 11.2 cd with 30.3 lm, and the FA group ranges from 11.2 cd to 14.0 cd with 37.8 lm.

4.At a forward current , the device is divided into four forward voltage groups (3A, 3B, 4A, 4B) with defined minimum and maximum forward voltage () ranges: the 3A group has a range of 1.90 V to 2.05 V, the 3B group spans 2.05 V to 2.20 V, the 4A group covers 2.20 V to 2.35 V, and the 4B group extends from 2.35 V to 2.50 V, which aligns with the overall forward voltage limits specified in the device’s electrical characteristics.

FAQ

1.How is quality assured? Our company is a large electronic components agent in China, with more than 10 years of experience in the industry, we promise that all the products we sell are CREE, OSRAM, LUMILEDS, TSLC (the original SEMILEDS), SEOUL original and genuine, with qualified quality, so please rest assured that you can buy.

2.How to place an order? All the independent shot, the warehouse are shipped in accordance with the regular material, it is best to consult the sales staff to confirm the model parameters price and whether the spot before placing an order. 3.What's the delivery time? Generally 3-7 working days within the shipment, the order of the lamp beads to the sales staff of the actual response to the delivery time shall prevail. 4, How about after-sales? If you find any abnormality after receiving the goods, please do not use it and immediately take a picture of the abnormality and contact the sales staff so that we can deal with it for you in time.

5. How do you ship and how long does it take to get there? We usually ship with DHL, UPS, FedEx, SF, EMS, TNT. It usually takes 3-5 days to arrive, except for remote areas, air and sea transportation are also optional.

6.What payment methods do we accept?

We accept telegraphic transfer, TT, letter of credit, other payment methods are negotiation

Tags:

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

products details

Amber 612-624nm LED 0.5W AMS-OSRAM LA G6SP for 3528 Chip Diode Thinfilm Technology Custom Tuning

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips

TSLC Semileds LED Lamp Beads

High Power LED Chip

OSRAM LED Chip

CREE LED Chip

ST IC Chips

TI Chips

Bridgelux LED Chip

Infineon Chip

LUMINUS LED Chip

LED Lamp Beads

SAMSUNG IC Chips

Micron Chips

SK Hynix Chips

Lumileds LED Chip

SAMSUNG LED Chip

SEOUL LED Chip

NICHIA LED Chip

NeXperia Chips

ONsemi Chips

ADI Chips